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Determination of Energy Band Gap in Semiconductor Diode Manufacturer,Supplier and Exporter in India

Determination of Energy Band Gap in Semiconductor Diode

Product Code : JA-AET-1460
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Determination of Energy Band Gap in Semiconductor Diode 

Object:

  • To draw the characteristics of a P-N junction Diode for reverse saturation current and temperature
  • To determine the Energy Band Gap in a P-N Junction Diode

Features:

  • 2V D.C. at 10mA, regulated Power Supply
  • Digital Micro ammeter, 3½ digits having range 200mA D.C.
  • Semiconductor Diode
  • Thermometer 0-110 °C
  • Oven, Electrically heated to heat the Semiconductor Diode
  • Mains ON/OFF switch and Fuse
  • The unit is operative on 230V ±10% at 50Hz A.C. Mains
  • Adequate no. of patch cords stackable from rear both ends 4mm spring loaded plug length ½ metre
  • Good Quality, reliable terminal/sockets are provided at appropriate places on panel for connections /observation of waveforms
  • Strongly supported by detailed Operating Instructions, giving details of Object, Theory, Design procedures, Report Suggestions and Book References

 


   

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+91-85699-09696

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